1 - 5 ? 2000 ixys all rights reserved v ces = 600 v i c25 = 75 a v ce(sat) = 2.5 v t fi = 150 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.5 v features international standard package minibloc aluminium nitride isolation - high power dissipation isolation voltage 3000 v~ very high current, fast switching igbt & fred diode mos gate turn-on - drive simplicity low collector-to-case capacitance low package inductance (< 10 nh) - easy to drive and to protect molding epoxies meet ul 94 v-0 flammability classification applications ac motor speed control dc servo and robot drives dc choppers buck converters advantages easy to mount with 2 screws space savings high power density 98502c (8/99) symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces p c t c = 25 c 250 w v rrm 600 v i favm t c = 70 c; rectangular, d = 50% 60 a i frm t p z<10 ms; pulse width limited by t j 600 a p d t c = 25 c 150 w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s igbt diode case ixgn 50n60bd2 ixgn 50n60bd3 hiperfast tm igbt with hiperfred buck & boost configurations sot-227b, minibloc e 153432 2 1 4 3 ...bd2 ...bd3 IXGN50N60BD2 1 = emitter; 2 = gate 3 = collector; 4 = diode cathode ixgn50n60bd3 1 = emitter/diode cathode; 2 = gate 3 = collector; 4 = diode anode ixys reserves the right to change limits, test conditions, and dimensions.
2 - 5 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 35 50 s pulse test, t 300 s, duty cycle 2 % c ies 4100 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 290 pf c res 50 pf q g 110 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 35 nc t d(on) 50 ns t ri 50 ns t d(off) 110 250 ns t fi 150 220 ns e off 3.0 4.0 mj t d(on) 50 ns t ri 60 ns e on 3.0 mj t d(off) 200 ns t fi 250 ns e off 4.2 mj r thjc 0.50 k/w r thck 0.05 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions typ. max. i r t vj = 25c v r = v rrm 650 ua t vj = 150c 2.5 ma v f i f = 60 a, t vj = 150c 1.75 v pulse test, t 300 s, duty cycle d 2 % t vj = 25c 2.40 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s 8.0 a v r = 540 v t rr i f = 1 a, -di/dt = 50 a/ s, v r = 30 v t j = 25 c35 ns r thjc 0.85 k/w ixgn 50n60bd2 ixgn 50n60bd3 m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 5 ? 2000 ixys all rights reserved v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 v ge - volts 0246810 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 9v 5v v ce = 10v t j = 25 c t j = 25 c i c = 25a i c = 50a i c = 100a t j = 125 c f = 1mhz 7v v ge = 15v t j = 25 c v ce - volts 012345 i c - amperes 0 20 40 60 80 100 t j = 125 c c iss c oss 7v 5v v ge = 15v 13v 11v 9v 9v v ge = 15v 13v 11v v ge = 15v 13v 7v 11v c rss 5v ixgn 50n60bd2 ixgn 50n60bd3 fig. 2. extended output characteristics fig. 1. saturation voltage characteristics fig. 4. temperature dependence of v ce(sat) fig. 3. saturation voltage characteristics fig. 5. saturation voltage characteristics fig. 6. junction capacitance curves
4 - 5 ? 2000 ixys all rights reserved pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 v ce - volts 0 100 200 300 400 500 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 50 100 150 200 250 300 v ge - volts 0 5 10 15 20 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 i c - amperes 0 20406080100 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 v ce = 250v i c =50a e (on) e (off) e (on) e (off) t j = 125c r g = 5.2 dv/dt < 5v/ns t j = 125c 600 e (off) e (off) r g = 4.7 i c =25a t j = 125c i c = 100a i c = 50a e (on) e (on) ixgn 50n60bd2 ixgn 50n60bd3 fig. 11. transient thermal resistance fig. 8. dependence of tfi and e off on r g . fig. 7. dependence of e on and e off on i c . fig. 9. gate charge fig. 10. turn-off safe operating area
5 - 5 ? 2000 ixys all rights reserved 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0 1 2 3 4 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v nc a/ m s a/ m s t rr ns t fr a/ m s s dsep 60-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100 c v r = 300v t vj = 100 c i f = 60a fig. 14 peak reverse current i rm versus -di f /dt fig. 13 reverse recovery charge q r versus -di f /dt fig. 12 forward current i f versus v f t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 15 dynamic parameters q r , i rm versus t vj fig. 16 recovery time t rr versus -di f /dt fig. 17 peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 18 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385 t vj = 25 c t vj =150 c t vj =100 c ixgn 50n60bd2 ixgn 50n60bd3
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